Barriers, Challenges, and Supports for Latino/a/x Music Educators

Latino/a/x students are the largest minoritized group in the United States (Urrieta, Jr. & Ruiz Bybee, 2022), yet the Latino/a/x community remains underrepresented in music education when compared to their overall U. S. population (DeLorenzo & Silverman, 2016; Elpus, 2015; Escalante, 2019a). Despite projections that the number of Latino/a/x students will grow to 30% of the total public-school enrollment by 2030 (the National Center for Education Statistics, 2022), the educator population remains predominately White (Noboa-Ríos, 2019). Few researchers have examined the underrepresentation of the Latino/a/x community in music education, and those who have done so have focused on smaller groups using qualitative methods. The purpose of this study was to investigate the educational experiences of Latino/a/x music educators at three stages (primary and secondary school, preservice, and in-service). A secondary purpose was to examine the possible differences in perception of challenges, barriers, and support systems at these different stages of their educational experience. Latino/a/x music teachers (N = 136) employed during the 2022–2023 school year and who resided in states with one million or more Latino/a/x residents responded to a researcher-designed survey. Implications of this research highlight teaching practices, areas of deficiency in teacher preparation programs, and strategies for the recruitment of secondary students into higher education. Findings revealed that the Latino/a/x educational experience greatly varied based on socioeconomic status and being a first-generation college student. Financial challenges and lack of support were consistent barriers at all educational levels while family and peers served as the greatest support systems. In order to create a more equitable experience for our students in the classroom and the educators with whom they interact, it seems crucial that researchers further investigate the Latino/a/x educational experience. Keywords: Music Education, Latino, Latina, Latinx, recruitment, retentio

The Electrode-Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO-Based Ferroelectric Capacitors

Ferroelectric hafnium-zirconium oxide is one of the most relevant CMOS-compatible materials for next-generation, non-volatile memory devices. Nevertheless, performance reliability remains an issue. With TiN electrodes (the most reported electrode material), Hf-Zr-based ferroelectric capacitors struggle to provide reliable retention due to electrode-ferroelectric interface interactions. Although Hf-Zr-based ferroelectric capacitors are fabricated with other electrodes, the focus is predominantly directed toward obtaining a large ferroelectric response. The impact of the electrodes on data retention for these ferroelectrics remains underreported and greater insight is needed to improve device reliability. Here, a comprehensive set of electrodes are evaluated with emphasis on the core ferroelectric memory reliability metrics of endurance, retention, and imprint. Metal-ferroelectric-metal capacitors comprised of a Hf0.5Zr0.5O2 layer deposited between different combinations of nitride (TiN, TiAlN, and NbN), pure metal (W), and oxide (MoO2, RuO2, and IrO2) top and bottom electrodes are fabricated for the investigation. From the electrical, physical, and structural analysis, the low reactivity of the electrode with the ferroelectric is found to be key for improved reliability of the ferroelectric capacitor. This understanding of interface properties provides necessary insight for the broad implementation of Hf-Zr-based ferroelectrics in memory technology and, overall, boosts the development of next-generation memories

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development

Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Abstract Further optimization of a typically reported ferroelectric capacitor comprised of a Hf0.5Zr0.5O2 ferroelectric thin film with TiN electrodes is explored by introducing an additional non‐ferroelectric La2O3 interfacial layer evaluated at different positions in the capacitor stack. The role of the interface to the ferroelectric layer is investigated and discussed, with the main focus directed toward the reliability of the device for non‐volatile memory applications. With this investigation, different degradation mechanisms determining electric field cycling and polarization retention are observed, and it is concluded that modifying the bottom interface between the electrode and the ferroelectric layer has the best potential to provide a benefit in device performance

Ectopic expression of a mechanosensitive channel confers spatiotemporal resolution to ultrasound stimulations of neurons for visual restoration

International audienceAbstract Remote and precisely controlled activation of the brain is a fundamental challenge in the development of brain–machine interfaces for neurological treatments. Low-frequency ultrasound stimulation can be used to modulate neuronal activity deep in the brain, especially after expressing ultrasound-sensitive proteins. But so far, no study has described an ultrasound-mediated activation strategy whose spatiotemporal resolution and acoustic intensity are compatible with the mandatory needs of brain–machine interfaces, particularly for visual restoration. Here we combined the expression of large-conductance mechanosensitive ion channels with uncustomary high-frequency ultrasonic stimulation to activate retinal or cortical neurons over millisecond durations at a spatiotemporal resolution and acoustic energy deposit compatible with vision restoration. The in vivo sonogenetic activation of the visual cortex generated a behaviour associated with light perception. Our findings demonstrate that sonogenetics can deliver millisecond pattern presentations via an approach less invasive than current brain–machine interfaces for visual restoration

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

International audienceFerroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development